GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

B. Parvais, A. Alian, Uthayasankaran Peralagu, Raul Rodriguez, Sachin Yadav, A. Khaled, R. Y. Elkashlan, V. Putcha, A. Sibaja-Hernandez, M. Zhao, P. Wambacq, Nadine Collaert, N. Waldron

Onderzoeksoutput: Conference paper

2 Citaten (Scopus)

Samenvatting

We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak gm of 430 mS/mm and an fMAX of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1μm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.

Originele taal-2English
Titel2020 IEEE International Electron Devices Meeting, IEDM 2020
UitgeverijInstitute of Electrical and Electronics Engineers Inc.
Pagina's8.1.1-8.1.4
ISBN van elektronische versie9781728188881
DOI's
StatusPublished - 12 dec 2020
Evenement66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duur: 12 dec 202018 dec 2020

Publicatie series

NaamTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN van geprinte versie0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
LandUnited States
StadVirtual, San Francisco
Periode12/12/2018/12/20

Vingerafdruk

Duik in de onderzoeksthema's van 'GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL'. Samen vormen ze een unieke vingerafdruk.

Citeer dit