Growth of monocrystalline GeN on a substrate

Ruben Lieten (Uitvinder), Stefan Degroote (Uitvinder), Gustaaf Borghs (Uitvinder)

Onderzoeksoutput: Patent

Samenvatting

The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550°C and 940°C, exposing the substrate (1 ) to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer (4) on a substrate (1 ). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface (3).
Originele taal-2English
OctrooinummerEP2050126B
IPCH01L21/318
Prioriteitsdatum20/07/07
Indieningsdatum22/04/09
StatusPublished - 2019

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