III-V/III-N technologies for next generation high-capacity wireless communication

N. Collaert, A. Alian, A. Banerjee, G. Boccardi, P. Cardinael, V. Chauhan, C. Desset, R. Elkashlan, A. Khaled, M. Ingels, B. Kunert, Y. Mols, B. O'Sullivan, U. Peralagu, N. Pinho, R. Rodriguez, A. Sibaja-Hernandez, S. Sinha, X. Sun, A. VaisB. Vermeersch, S. Yadav, D. Yan, H. Yu, Y. Zhang, M. Zhao, J. Van Driessche, G. Gramegna, P. Wambacq, B. Parvais, M. Peeters

Onderzoeksoutput: Conference paperResearch

Samenvatting

In this paper, we will discuss the progress that has been made in upscaling GaN and InP to a Si platform as well as making them CMOS and 3D compatible to enable the heterogeneous systems that will be needed for 5G mm-wave and 6G sub-THz frequencies for high-capacity wireless communication.

Originele taal-2English
Titel2022 International Electron Devices Meeting, IEDM 2022
UitgeverijInstitute of Electrical and Electronics Engineers Inc.
Pagina's1151-1154
Aantal pagina's4
ISBN van elektronische versie9781665489591
DOI's
StatusPublished - 2022
Evenement2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duur: 3 dec 20227 dec 2022

Publicatie series

NaamTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN van geprinte versie0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Land/RegioUnited States
StadSan Francisco
Periode3/12/227/12/22

Bibliografische nota

Funding Information:
ACKNOWLEDGMENT The contributions of the Advanced RF and 3D system integration research teams at imec are acknowledged. This work is supported by imec’s IIAP program members and partially supported by the H2020 project COREnect (Grant Agreement no. 956830). REFERENCES

Publisher Copyright:
© 2022 IEEE.

Copyright:
Copyright 2023 Elsevier B.V., All rights reserved.

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