Implementation of onsite Junction Temperature Estimation for a SiC MOSFET Module for Condition Monitoring

This paper presents an advanced methodology for mapping junction temperature ( Tj ) based on the drain to source resistance ( Rds,on ) of a SiC MOSFET module to monitor the power electronics converter health condition. Capturing real-time measurement of on-state drain-source voltage ( Vds,on ), drain-source current ( Ids,on ) and baseplate temperature, and taking advantage of a fast edge computing device, a significant correlation can be established between Tj and Rds,on . Due to having a linear correlation and simple circuity in comparison to other junction temperature estimation methods, e.g., the internal gate resistance method ( RGint ), gate threshold voltage method ( Vg,th ) and short-circuit current method ( Isc ), the output results of the proposed paper can be effortlessly implemented in a simple microcontroller that can monitor the health condition of a SiC MOSFET module in terms of bond wire fatigue and metallization reconstruction. To validate the proposed method, a synchronous boost converter is prototyped and tested. The experimental results depict the effectiveness of the proposed method.