Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation

Rana ElKashlan, Ahmad Khaled, Raul Rodriguez, Vamsi Putcha, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais

Onderzoeksoutput: Conference paper

Samenvatting

We investigate the effect of varying the gate-to-drain spacing and the gate field-plate on the device linearity of GaN HEMTs on Si for 0.11μm, 0.15μm, and 0.19μm gate lengths. The gain compression, phase distortion, and harmonic distortion metrics are measured using a nonlinear characterisation setup calibrated at 6GHz up to the third harmonic. The acquired nonlinearity metrics are correlated with the extrinsic device parasitics extracted from S-parameter measurements. We observe that excessive gate field-plate length scaling down to 0.05μm lowers the total phase distortion at the expense of gain linearity and harmonic distortion in Class AB while minimising the gate-to-drain spacing alleviates the harmonic distortion only for devices of 0.19μm gate length. Further evaluation, under matched conditions, using a passive load-pull measurement setup points to a decline in the peak achievable PAE and PSAT at gate field-plates smaller than 0.12μm.
Originele taal-2English
Titel2021 16th European Microwave Integrated Circuits Conference (EuMIC)
UitgeverijIEEE
Pagina's30-33
Aantal pagina's4
ISBN van elektronische versie978-2-87487-064-4
ISBN van geprinte versie978-1-6654-4722-5
DOI's
StatusPublished - 3 apr 2022
EvenementEuropean Microwave Week: United in Microwaves - ExCEL London, London, United Kingdom
Duur: 2 apr 20227 apr 2022
Congresnummer: 51
https://www.eumw2021.com/

Publicatie series

NaamEuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference

Conference

ConferenceEuropean Microwave Week
Verkorte titelEuMW
LandUnited Kingdom
StadLondon
Periode2/04/227/04/22
Internet adres

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