High voltage GaN power transistors have the potential to enable high efficiency and power density of power electronic converters like on- board charger (OBC) in electric vehicles. A comprehensive design optimization with state-of- the-art GaN-HEMT devices is essential to achieve a lightweight, compact and efficient OBC. This paper presents a design optimization for achieving multiple objectives (efficiency and volume) at the same time. The optimization searches for optimal switching frequencies and suitable GaN-HEMT transistors for a given power rating. These state- of-the-art GaN-HEMT transistors are collected from different manufacture regarding the smallest values of Rds(on) and different type of packaging. The optimal solutions show that a 3.7 kW OBC based on 650V GaN devices can achieve an efficiency of 96.32%, volume of 1.82 L and power density of 2.03 kW/L.
|Titel||2019 IEEE Vehicle Power and Propulsion Conference (VPPC)|
|Plaats van productie||hanoi, Vietnam|
|ISBN van elektronische versie||978-1-7281-1249-7|
|ISBN van geprinte versie||978-1-7281-1250-3|
|Status||Published - 14 okt 2019|
|Naam||2019 IEEE Vehicle Power and Propulsion Conference, VPPC 2019 - Proceedings|