RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

Rana ElKashlan, Ahmad Khaled, Raul Rodriguez, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais

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Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize T-shape gates due to their large gate-line cross-sectional area and subsequent fMAX increase. In this paper, we report the linearity trade-offs associated with varying the T-gate geometries of AlGaN/GaN HEMTs on Si, specifically the gate extensions which serve as field plates and their impact on the large-signal performance. Small-signal characterization and modeling, in addition to TCAD, provide initial guidelines for the optimal dimensions for the gate field plates using the ratio of fT and the product of the gate resistance and the gate-to-drain capacitance. We utilize various characterization methods, including 6 GHz non-linear vector network analyzer characterization in addition to load-pull, to quantify the amplitude and phase distortion and their subsequent impact on the large-signal metrics of the devices under differing matching conditions and bias points. We deduce that the influence of the gate field plates on the amplitude and phase distortion is non-negligible, particularly under matched conditions.
Originele taal-2English
Pagina's (van-tot)1-10
Aantal pagina's10
TijdschriftInternational Journal of Microwave and Wireless Technologies
StatusPublished - 20 mrt 2023

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Publisher Copyright:
Copyright © The Author(s), 2023. Published by Cambridge University Press in association with the European Microwave Association.

Copyright 2023 Elsevier B.V., All rights reserved.


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