RF performance degradation due to coupling of digital switching noise in lightly doped substrates

Charlotte Soens, C. Crunelle, Piet Wambacq, Gerd Vandersteen, Dimitri Linten, S. Donnay, Yves Rolain, Maarten Kuijk, Alain Barel

Onderzoeksoutput: Conference paper

13 Citaten (Scopus)

Samenvatting

Coupling of digital switching noise to the silicon substrate can severely degrade the analog and RF performance in single-chip transceivers. To predict the degradation of the performance of RF circuits, modeling of the impact of substrate noise is absolutely necessary. Using measurements, this impact is modeled by the cascade of an attenuation through the substrate from the source of substrate noise to the RF circuit and the propagation through the RF circuit to its output. This approach has been validated with measurements on a 0.25 mum CMOS low-noise amplifier (LNA) and reveals insight in the mechanism of impact of substrate noise on RF circuits. In addition, impact of a real digital circuit is measured on a 0.18 mum differential CMOS LNA
Originele taal-2English
Titel2003 SOUTHWEST SYMPOSIUM ON MIXED-SIGNAL DESIGN
UitgeverijIEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Pagina's127-132
Aantal pagina's6
ISBN van geprinte versie0-7803-7778-8
StatusPublished - 23 feb 2003
EvenementUnknown - Stockholm, Sweden
Duur: 21 sep 200925 sep 2009

Conference

ConferenceUnknown
Land/RegioSweden
StadStockholm
Periode21/09/0925/09/09

Bibliografische nota

Southwest Symposium on Mixed-Signal Design, Las Vegas, NV, USA, 23-25 February 2003, pp. 127-132

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