Semiconductor snail laser

M.j. Strain, A. Perez, G. Mezosi, Guy Verschaffelt, A. Scire, Jan Danckaert, M. Sorel, S. Balle

Onderzoeksoutput: Meeting abstract (Book)

Samenvatting

A new snail laser geometry is modelled and presented, exhibiting stable, unidirectional lasing at both 1550 nm and 808 nm. We have calculated the fundamental mode thresholds and output power for Semiconductor Snail Laser (SSL) as a function of device parameters, i.e. coupler efficiency and output facets reflectivities. The coupler efficiency is the fraction of light transmitted between the waveguides in the directional couplers (DC). We have used a scattering matrix formulation and an analytical approximation to the optical susceptibility for the medium description, in order to determine the "optimal" coupling efficiency that maximizes the output power. Lasing action and good emission properties were therefore theoretically predicted.
Originele taal-2English
TitelProc. Conf. on Lasers and Electro-Optics Eur. And 11th Eur. Quant. Electron. Conf (CLEO/EQEC), 2009
UitgeverijIEEE
Pagina's10834104
Aantal pagina's1
ISBN van geprinte versie978-1-4244-4079-5
StatusPublished - 2009
EvenementUnknown - Stockholm, Sweden
Duur: 21 sep 200925 sep 2009

Publicatie series

NaamProc. Conf. on Lasers and Electro-Optics Eur. And 11th Eur. Quant. Electron. Conf (CLEO/EQEC), 2009

Conference

ConferenceUnknown
Land/RegioSweden
StadStockholm
Periode21/09/0925/09/09

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