Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression

Hovik  Baghdasaryan; Tamara  Knyazyan; Tamara Hovhannisyan; Gurgen  Mardoyan; Tigran Baghdasaryan; Hristo Danchov Ivanov; Pasha  Bekhrad; Marian  Marciniak; Erich  Leitgeb

doi:10.1109/COBCOM55489.2022.9880646

Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression

Hovik Baghdasaryan
, Tamara Knyazyan
, Tamara Hovhannisyan
, Gurgen Mardoyan
, Tigran Baghdasaryan
, Hristo Danchov Ivanov
, Pasha Bekhrad
, Marian Marciniak
, Erich Leitgeb

Onderzoeksoutput: Conference paper

3 Citaten (Scopus)

Samenvatting

Advantages of optical links for data transmission are doubtless. Different types of optical interconnects for inter/intra chip links are under development. Electro-optical modulators (EOMs) are one of key elements of optical links. Transmission-type EOM for chip-to-chip optical interconnection is analysed by the method of single expression. Transmission properties of Fabry-Perot resonant type modulator consisting of electro-optical material embedded between Si/SiO2 distributed Bragg reflectors (DBRs) are analysed. From four possible types of DBRs the suitable structure has been chosen. Two semi-transparent conducting electrodes for applying electrical signal to electro-optical material are parts of the nano-layered structure and are included in the electromagnetic model. As an external light source, a conventional laser diode of wavelength 1.55.m is taken. Efficiency of optical wave intensity modulation is analysed by means of influence of electro-optical material's permittivity change (under applied voltage) on resonator's maximal transmission peak shift. For the electro-optical material LiNbO3 of thickness about 1 mm the suitable resonance peak shift is obtained.

Originele taal-2	English
Titel	Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression
Uitgeverij	IEEE
Pagina's	1-5
Aantal pagina's	5
ISBN van elektronische versie	9781665485982
DOI's	https://doi.org/10.1109/COBCOM55489.2022.9880646
Status	Published - jul. 2022
Evenement	4th International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications (CoBCom) - Graz Univ Technol, Fac Elect Engn, Graz, AUSTRIA, Graz, Austria Duur: 12 jul. 2022 → 14 jul. 2022

Publicatie series

Naam	2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022

Conference

Conference	4th International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications (CoBCom)
Land/Regio	Austria
Stad	Graz
Periode	12/07/22 → 14/07/22

Bibliografische nota

Funding Information:
ACKNOWLEDGMENTS This work was supported by the Science Committee of the Republic of Armenia (SC of RA), in the frames of the research project № 21T-2J194. This publication was based upon work from COST Action NEWFOCUS CA19111, supported by COST (European Cooperation in Science and Technology).

Publisher Copyright:
© 2022 IEEE.

Copyright:
Copyright 2022 Elsevier B.V., All rights reserved.

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Baghdasaryan, H., Knyazyan, T., Hovhannisyan, T., Mardoyan, G., Baghdasaryan, T., Ivanov, H. D., Bekhrad, P., Marciniak, M., & Leitgeb, E. (2022). Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. In Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression (blz. 1-5). (2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022). IEEE. https://doi.org/10.1109/COBCOM55489.2022.9880646

Baghdasaryan, Hovik ; Knyazyan, Tamara ; Hovhannisyan, Tamara et al. / Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. IEEE, 2022. blz. 1-5 (2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022).

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title = "Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression",

abstract = "Advantages of optical links for data transmission are doubtless. Different types of optical interconnects for inter/intra chip links are under development. Electro-optical modulators (EOMs) are one of key elements of optical links. Transmission-type EOM for chip-to-chip optical interconnection is analysed by the method of single expression. Transmission properties of Fabry-Perot resonant type modulator consisting of electro-optical material embedded between Si/SiO2 distributed Bragg reflectors (DBRs) are analysed. From four possible types of DBRs the suitable structure has been chosen. Two semi-transparent conducting electrodes for applying electrical signal to electro-optical material are parts of the nano-layered structure and are included in the electromagnetic model. As an external light source, a conventional laser diode of wavelength 1.55.m is taken. Efficiency of optical wave intensity modulation is analysed by means of influence of electro-optical material's permittivity change (under applied voltage) on resonator's maximal transmission peak shift. For the electro-optical material LiNbO3 of thickness about 1 mm the suitable resonance peak shift is obtained.",

keywords = "electro-optical modulatorelectromagnetic modellingchip-to-chip interconnectnumerical modellingmethod of single expression",

author = "Hovik Baghdasaryan and Tamara Knyazyan and Tamara Hovhannisyan and Gurgen Mardoyan and Tigran Baghdasaryan and Ivanov, \{Hristo Danchov\} and Pasha Bekhrad and Marian Marciniak and Erich Leitgeb",

note = "Funding Information: ACKNOWLEDGMENTS This work was supported by the Science Committee of the Republic of Armenia (SC of RA), in the frames of the research project № 21T-2J194. This publication was based upon work from COST Action NEWFOCUS CA19111, supported by COST (European Cooperation in Science and Technology). Publisher Copyright: {\textcopyright} 2022 IEEE. Copyright: Copyright 2022 Elsevier B.V., All rights reserved.; 4th International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications (CoBCom) ; Conference date: 12-07-2022 Through 14-07-2022",

year = "2022",

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language = "English",

series = "2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022",

publisher = "IEEE",

pages = "1--5",

booktitle = "Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression",

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Baghdasaryan, H, Knyazyan, T, Hovhannisyan, T, Mardoyan, G, Baghdasaryan, T, Ivanov, HD, Bekhrad, P, Marciniak, M & Leitgeb, E 2022, Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. in Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. 2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022, IEEE, blz. 1-5, 4th International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications (CoBCom), Graz, Austria, 12/07/22. https://doi.org/10.1109/COBCOM55489.2022.9880646

Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. / Baghdasaryan, Hovik ; Knyazyan, Tamara ; Hovhannisyan, Tamara et al.
Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. IEEE, 2022. blz. 1-5 (2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022).

Onderzoeksoutput: Conference paper

TY - GEN

T1 - Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression

AU - Baghdasaryan, Hovik

AU - Knyazyan, Tamara

AU - Hovhannisyan, Tamara

AU - Mardoyan, Gurgen

AU - Baghdasaryan, Tigran

AU - Ivanov, Hristo Danchov

AU - Bekhrad, Pasha

AU - Marciniak, Marian

AU - Leitgeb, Erich

N1 - Funding Information: ACKNOWLEDGMENTS This work was supported by the Science Committee of the Republic of Armenia (SC of RA), in the frames of the research project № 21T-2J194. This publication was based upon work from COST Action NEWFOCUS CA19111, supported by COST (European Cooperation in Science and Technology). Publisher Copyright: © 2022 IEEE. Copyright: Copyright 2022 Elsevier B.V., All rights reserved.

PY - 2022/7

Y1 - 2022/7

N2 - Advantages of optical links for data transmission are doubtless. Different types of optical interconnects for inter/intra chip links are under development. Electro-optical modulators (EOMs) are one of key elements of optical links. Transmission-type EOM for chip-to-chip optical interconnection is analysed by the method of single expression. Transmission properties of Fabry-Perot resonant type modulator consisting of electro-optical material embedded between Si/SiO2 distributed Bragg reflectors (DBRs) are analysed. From four possible types of DBRs the suitable structure has been chosen. Two semi-transparent conducting electrodes for applying electrical signal to electro-optical material are parts of the nano-layered structure and are included in the electromagnetic model. As an external light source, a conventional laser diode of wavelength 1.55.m is taken. Efficiency of optical wave intensity modulation is analysed by means of influence of electro-optical material's permittivity change (under applied voltage) on resonator's maximal transmission peak shift. For the electro-optical material LiNbO3 of thickness about 1 mm the suitable resonance peak shift is obtained.

AB - Advantages of optical links for data transmission are doubtless. Different types of optical interconnects for inter/intra chip links are under development. Electro-optical modulators (EOMs) are one of key elements of optical links. Transmission-type EOM for chip-to-chip optical interconnection is analysed by the method of single expression. Transmission properties of Fabry-Perot resonant type modulator consisting of electro-optical material embedded between Si/SiO2 distributed Bragg reflectors (DBRs) are analysed. From four possible types of DBRs the suitable structure has been chosen. Two semi-transparent conducting electrodes for applying electrical signal to electro-optical material are parts of the nano-layered structure and are included in the electromagnetic model. As an external light source, a conventional laser diode of wavelength 1.55.m is taken. Efficiency of optical wave intensity modulation is analysed by means of influence of electro-optical material's permittivity change (under applied voltage) on resonator's maximal transmission peak shift. For the electro-optical material LiNbO3 of thickness about 1 mm the suitable resonance peak shift is obtained.

KW - electro-optical modulatorelectromagnetic modellingchip-to-chip interconnectnumerical modellingmethod of single expression

UR - https://www.scopus.com/pages/publications/85139415821

U2 - 10.1109/COBCOM55489.2022.9880646

DO - 10.1109/COBCOM55489.2022.9880646

M3 - Conference paper

T3 - 2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022

SP - 1

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BT - Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression

PB - IEEE

T2 - 4th International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications (CoBCom)

Y2 - 12 July 2022 through 14 July 2022

ER -

Baghdasaryan H, Knyazyan T, Hovhannisyan T, Mardoyan G, Baghdasaryan T, Ivanov HD et al. Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. In Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression. IEEE. 2022. blz. 1-5. (2022 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, CoBCom 2022). doi: 10.1109/COBCOM55489.2022.9880646

Transmission Type Nano-Layered Electro-Optical Modulator for Chip-to-Chip Optical Interconnection: Electromagnetic Modelling by the Method of Single Expression

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